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Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency
- Source :
- Journal of Crystal Growth. 535:125377
- Publication Year :
- 2020
- Publisher :
- Elsevier BV, 2020.
-
Abstract
- 0.8 to 1 μm Si and Be doped InSb were grown by molecular beam epitaxy. X-ray diffraction and atomic force microscope indicate that growth temperature below 340 °C severely results in dislocations and undulating surface. Silicon shows amphoteric doping nature in InSb at higher growth or Si cell temperatures, for the calculation result reveals it needed more energy to take the place of Sb. ECV measurement demonstrates that InSb/In0.9Al0.1Sb superlattice buffer layer can effectively inhibit Be dopant from diffusing to the substrate in the 420 °C InSb, with which both the doping level and crystalline quality are significantly improved. 790–870 °C Be doped InSb transfer from p- to n-type during the Hall measurement temperature increasing from 77 K to 330 K. The transition temperature of each sample is linearly correlated to the Be doping temperature, which is theoretically interpreted by the excitation mechanism and carrier transportation principles inside InSb.
- Subjects :
- 010302 applied physics
Materials science
Silicon
Dopant
business.industry
Superlattice
Transition temperature
Doping
chemistry.chemical_element
02 engineering and technology
Substrate (electronics)
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Inorganic Chemistry
chemistry
Hall effect
0103 physical sciences
Materials Chemistry
Optoelectronics
0210 nano-technology
business
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 535
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........99829b1433b7c7ead0073b0cde3f60f9