Synthesis of the highly porous semiconductors with different electrical features using isostructural metal-organic frameworks as precursor

Two C/ZnO nanocomposites and one C/Zn nanocomposite were synthesized by thermal decomposition of the prepared isostructural metal–organic frameworks with slight differences in their nature. The precursors of the C/ZnO and the C/Zn nanocomposites contain phenyl derivatives in oxidized or reduced state and naphthyl derivative, respectively. The titled nanocomposites consist of the high porosity, 902, 1117 and 583 m2/g, respectively. The as-prepared nanocomposites have been characterized by X-ray powder diffraction (PXRD) analysis and elemental mapping. The size and morphology of the samples were studied using field emission scanning electron microscopy (FE-SEM). The results indicated that the synthesized porous nanocomposites as the semiconductor materials displayed good electrical conductivity with different specific resistances.