Research on Process Parameter Effects on Surface Roughness and Subsurface Damage in CMP of Single Crystalline Silicon

Reported in this paper is an investigation of the process parameter effects on surface roughness and subsurface damage (SSD) in CMP of single crystalline Silicon. For the given experiments, the appropriate method to examine the SSD can be obtained. The surface roughness and figure accuracy were measured with an atomic force microscope (AFM) and Taylor-Hobson profilometer. The experiments results indicate proper process parameter for the best surface roughness, which can be divided into two stages. It should use longer time in the finish polishing stage, while shorter time and reduce the ratio of polishing pads and head in the ultra-finish polishing stage. Generally speaking, the isotropic etching of single crystalline Silicon, anisotropic etching of single crystalline Silicon and hand burnishing are mostly used to find the SSD and it is found that the last method is the best one to see the SSD by SEM.