Back to Search
Start Over
Te incorporation in GaAs1−xSbxnanowires and p-i-n axial structure
- Source :
- Semiconductor Science and Technology. 31:125001
- Publication Year :
- 2016
- Publisher :
- IOP Publishing, 2016.
-
Abstract
- We report on in situ Te-doping in GaAs1−xSbx nanowires (NWs) grown via self-assisted molecular beam epitaxy. Enhanced Te incorporation in the NW at higher Te cell temperature was attested by the broadening of the x-ray diffraction peak and the presence of a strong coupled-LO phonon mode in the Raman spectra. Te-doping was estimated from the shift in the coupled-LO phonon mode to be ~2.0 × 1018/cm3. The surfactant nature of the Te modulated the growth kinetics, which was manifested in an enhanced radial growth rate with improved photoluminescence (PL) characteristics at both room temperature (RT) and 4 K. No noticeable planar defects were observed as ascertained from the high-resolution transmission electron microscopy images and selected-area electron diffraction patterns. Finally, we demonstrate the experimental realization of a GaAs1−xSbx axial p-type/intrinsic/n-type (p-i-n) structure on a Si substrate with Te as the n-type dopant. The GaAs1−xSbx p-i-n NW structures exhibited rectifying current–voltage (I–V) behavior. The dopant concentration and the transport parameters estimated from the PL spectra and I–V curve were found to be in good agreement.
- Subjects :
- 010302 applied physics
Materials science
Photoluminescence
Dopant
Phonon
Nanowire
Analytical chemistry
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
Crystallography
symbols.namesake
Electron diffraction
Transmission electron microscopy
0103 physical sciences
Materials Chemistry
symbols
Electrical and Electronic Engineering
0210 nano-technology
Raman spectroscopy
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 13616641 and 02681242
- Volume :
- 31
- Database :
- OpenAIRE
- Journal :
- Semiconductor Science and Technology
- Accession number :
- edsair.doi...........99edf240e334013e0576e6c99b6cb1ff