The x dependent two kinds of resistive switching behaviors in SiOx films with different x component

We discover the transition phenomenon of two kinds of different resistive switching behaviors in SiOx based Pt/SiOx/Pt devices with different x component. When x 0.95, the operations do not need a current compliance and Vreset is higher than Vset. We use the silicon dangling bonds (Si-DBs) percolation model to explain the x dependent transition phenomenon. The microstructural transitions of tetrahedral Si-O configurations and related Si-DBs in as-deposited SiOx films with different x and the hopping conductance of low-resistance-states support our model.