Back to Search
Start Over
Development of design of 808 nm Al-free laser heterostructures with asymmetric barrier layers
- Source :
- 2018 International Conference Laser Optics (ICLO).
- Publication Year :
- 2018
- Publisher :
- IEEE, 2018.
-
Abstract
- We study the possibility of realization of the asymmetric barrier layers (ABL) concept in an 808-nm Al-free GaInAsP/InGaP/GaAs semiconductor laser. Two ABLs on both sides of the active region are aimed to suppress the parasitic recombination in the optical confinement layers. It is shown that such ABL-laser can be made fully Al-free having high suppression ratios for parasitic charge carrier flows (60 and 207 times for electrons and holes, respectively, as compared to a conventional SCH heterostructure).
- Subjects :
- 010302 applied physics
Materials science
business.industry
020208 electrical & electronic engineering
Heterojunction
02 engineering and technology
Electron
Laser
01 natural sciences
law.invention
Semiconductor laser theory
Semiconductor
law
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
Spontaneous emission
Charge carrier
business
Recombination
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2018 International Conference Laser Optics (ICLO)
- Accession number :
- edsair.doi...........9a383ef05d0916a2172f06ec8760854d