Designs for λ=1.55 µm GaN-Based Intersubband Laser Active Region

MLA

V. D. Jovanović, et al. “Designs for Λ=1.55 Μm GaN-Based Intersubband Laser Active Region.” Japanese Journal of Applied Physics, vol. 43, Nov. 2004, pp. 7444–47. EBSCOhost, https://doi.org/10.1143/jjap.43.7444.

APA

V. D. Jovanović, Zoran Ikonic, Richard A. Soref, Dragan Indjin, & Paul Harrison. (2004). Designs for λ=1.55 µm GaN-Based Intersubband Laser Active Region. Japanese Journal of Applied Physics, 43, 7444–7447. https://doi.org/10.1143/jjap.43.7444

Chicago

V. D. Jovanović, Zoran Ikonic, Richard A. Soref, Dragan Indjin, and Paul Harrison. 2004. “Designs for Λ=1.55 Μm GaN-Based Intersubband Laser Active Region.” Japanese Journal of Applied Physics 43 (November): 7444–47. doi:10.1143/jjap.43.7444.