A $��^{(2)}$-based AlGaAs Phase Sensitive Amplifier with Record Gain, Noise and Sensitivity

Phase sensitive amplifiers (PSAs) have the potential to empower substantial advances in emerging generations of optical communication systems as well as classical and quantum on-chip signal processing. The core building block of a PSA is a nonlinear medium. While the second-order nonlinearity ($��^{(2)}$) is stronger than the third-order nonlinearity ($��^{(3)}$), it is used less often in semiconductors for parametric amplification owing to the challenges of effectively phase matching the interacting waves as well as two-photon absorption of the pump. In this work, we demonstrate the successful design, fabrication, and characterization of the first $��^{(2)}$-based semiconductor PSA using an efficient phase matching approach and a pulsed pump, based on an aluminium gallium arsenide (AlGaAs) waveguide platform. Non-centrosymmetric semiconductors such as AlGaAs offer appreciable $��^{(2)}$. Such waveguides also achieve more than one order of magnitude greater pump field confinement when compared to other materials with large $��^{(2)}$ such as Periodically Poled Lithium Niobate (PPLN). Our AlGaAs PSA achieves an on-chip in-phase gain, a sensitivity of 0.005 photons per pulse, and approaches theoretical minimal noise figure (NF) of 0~dB. With the capability of operating on signal states with sub-single photons per pulse, our PSA could usher in a new era of on-chip quantum circuits.