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Experimental Study of PVD-TiN Gate with Poly-Si Capping and Its Application to 20 nm FinFET Fabrication
- Source :
- Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
- Publication Year :
- 2010
- Publisher :
- The Japan Society of Applied Physics, 2010.
- Subjects :
- Materials science
Fabrication
chemistry
chemistry.chemical_element
Nanotechnology
Tin
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials
- Accession number :
- edsair.doi...........9af597350323e25f79d7144ed32b514d
- Full Text :
- https://doi.org/10.7567/ssdm.2010.c-7-1