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Microstructure simulation of grain growth in Cu through silicon vias using phase-field modeling

Authors :
Christopher J. Wilson
Joke De Messemaeker
Nabi Nabiollahi
Mario Gonzalez
Eric Beyne
Nele Moelans
Ingrid De Wolf
Kristof Croes
Source :
Microelectronics Reliability. 55:765-770
Publication Year :
2015
Publisher :
Elsevier BV, 2015.

Abstract

A computationally-efficient 3D phase-field model for simulating grain growth in through silicon vias (TSVs) is presented. The model is capable of simulating grain growth in the cylindrical shape of a TSV. The results generated from the phase-field simulations are used in a finite element model with anisotropic elastic and isotropic plastic effects to investigate the large statistical distribution of Cu pumping (i.e. the irreversible thermal expansion of TSV) experimentally seen. The model thus allows to correlate the macroscopic plastic deformation with the grain size and grain orientations.

Details

ISSN :
00262714
Volume :
55
Database :
OpenAIRE
Journal :
Microelectronics Reliability
Accession number :
edsair.doi...........9b8d5166243ac1bd1497966a2ba5a98b
Full Text :
https://doi.org/10.1016/j.microrel.2015.02.009