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Microstructure simulation of grain growth in Cu through silicon vias using phase-field modeling
- Source :
- Microelectronics Reliability. 55:765-770
- Publication Year :
- 2015
- Publisher :
- Elsevier BV, 2015.
-
Abstract
- A computationally-efficient 3D phase-field model for simulating grain growth in through silicon vias (TSVs) is presented. The model is capable of simulating grain growth in the cylindrical shape of a TSV. The results generated from the phase-field simulations are used in a finite element model with anisotropic elastic and isotropic plastic effects to investigate the large statistical distribution of Cu pumping (i.e. the irreversible thermal expansion of TSV) experimentally seen. The model thus allows to correlate the macroscopic plastic deformation with the grain size and grain orientations.
- Subjects :
- Materials science
Through-silicon via
Silicon
Isotropy
Metallurgy
chemistry.chemical_element
Condensed Matter Physics
Microstructure
Atomic and Molecular Physics, and Optics
Grain size
Thermal expansion
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Grain growth
chemistry
Electrical and Electronic Engineering
Composite material
Safety, Risk, Reliability and Quality
Anisotropy
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 55
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........9b8d5166243ac1bd1497966a2ba5a98b
- Full Text :
- https://doi.org/10.1016/j.microrel.2015.02.009