The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers

MLA

Jianjun Zhu, et al. “The Investigation on Strain Relaxation and Double Peaks in Photoluminescence of InGaN/GaN MQW Layers.” Journal of Physics D: Applied Physics, vol. 42, Nov. 2009, p. 235104. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........9cd8a9e309cf09f0c3149f0e296f33e5&authtype=sso&custid=ns315887.

APA

Jianjun Zhu, Lei Wang, S.M. Zhang, Liu Zongliang, Yunfeng Qiu, Hui Wang, Dongwei Jiang, Huicong Yang, & D. G. Zhao. (2009). The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers. Journal of Physics D: Applied Physics, 42, 235104.

Chicago

Jianjun Zhu, Lei Wang, S.M. Zhang, Liu Zongliang, Yunfeng Qiu, Hui Wang, Dongwei Jiang, Huicong Yang, and D. G. Zhao. 2009. “The Investigation on Strain Relaxation and Double Peaks in Photoluminescence of InGaN/GaN MQW Layers.” Journal of Physics D: Applied Physics 42 (November): 235104. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........9cd8a9e309cf09f0c3149f0e296f33e5&authtype=sso&custid=ns315887.