An investigation of thermal boundary resistance in 1.3 µm edge‐emitting dilute nitride quantum well laser diodes

A theoretical investigation into the impact of the thermal boundary resistance on the performance of uncooled edge-emitting 1.3μm InGaAsN/GaAs quantum well lasers has been performed. A state-of-the-art 2D laser diode simulation tool has been extended to accurately model the thermal resistance due to the acoustic material mismatch and defect scattering at epitaxial interfaces. A small, but noticeable, increase in quantum well temperature is observed. The results clearly highlight the need for the inclusion of thermal boundary resistance in device simulation tools. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)