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High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate
- Source :
- IEEE Transactions on Electron Devices. 69:4859-4863
- Publication Year :
- 2022
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2022.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 69
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........9d73ac3e36ae39abffc0ed0b701f6037