Solution-Processed Barium Zirconate Titanate for Pentacene-Based Thin-Film Transistor and Memory

Pentacene-based organic thin-film transistors with solution-processed barium zirconate titanate dielectric layers are demonstrated. According to the programming/erasing operations, the devices exhibited memory characteristics, such as reversible threshold voltage shifts and nondestructive readout. In addition, the reliability of the memory devices was confirmed by data retention time and repeated switching cycles' endurance testing. In addition, the possible mechanism of the memory effect was also discussed. These results suggest that the devices could potentially be applied to nonvolatile memory applications in organic electronics.