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Schottky performance variation on r -plane and c -plane of GaN micro truncated-pyramid grown by selective area MOCVD

Authors :
Xiaobiao Han
Zheng-Zhou Pan
Zhisheng Wu
Weijie Chen
Changming Zhong
Jie Chen
Pu-Man Huang
Baijun Zhang
Jiezhi Liang
Yang Liu
Source :
Materials Science in Semiconductor Processing. 63:248-252
Publication Year :
2017
Publisher :
Elsevier BV, 2017.

Abstract

The electric properties of Pt Schottky contacts on semipolar r-plane and polar c-plane of GaN micro truncated-pyramid are compared. The Schottky diodes of the inclined r-plane sample illustrate a relatively inferior rectified performance than that of the top c-plane GaN in term of the lower Schottky barrier heights, larger ideality factor and reverse leakage current. By depositing Pt metal on the dislocation-free area of the top of GaN micro pyramid, the Schottky performance of r-plane GaN can be slightly improved, but still shows much larger reverse leakage current than that of c-plane GaN. It is found that polarization-related surface states and incorporation of donor impurities, rather than dislocation, should mainly contribute to this remarkable electric discrepancy of the planes.

Details

ISSN :
13698001
Volume :
63
Database :
OpenAIRE
Journal :
Materials Science in Semiconductor Processing
Accession number :
edsair.doi...........9e68e448f99242e04e0e01670af3b7b7
Full Text :
https://doi.org/10.1016/j.mssp.2017.02.030