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Schottky performance variation on r -plane and c -plane of GaN micro truncated-pyramid grown by selective area MOCVD
- Source :
- Materials Science in Semiconductor Processing. 63:248-252
- Publication Year :
- 2017
- Publisher :
- Elsevier BV, 2017.
-
Abstract
- The electric properties of Pt Schottky contacts on semipolar r-plane and polar c-plane of GaN micro truncated-pyramid are compared. The Schottky diodes of the inclined r-plane sample illustrate a relatively inferior rectified performance than that of the top c-plane GaN in term of the lower Schottky barrier heights, larger ideality factor and reverse leakage current. By depositing Pt metal on the dislocation-free area of the top of GaN micro pyramid, the Schottky performance of r-plane GaN can be slightly improved, but still shows much larger reverse leakage current than that of c-plane GaN. It is found that polarization-related surface states and incorporation of donor impurities, rather than dislocation, should mainly contribute to this remarkable electric discrepancy of the planes.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Mechanical Engineering
Schottky barrier
Schottky diode
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Reverse leakage current
Mechanics of Materials
Impurity
0103 physical sciences
Optoelectronics
General Materials Science
Metalorganic vapour phase epitaxy
Dislocation
0210 nano-technology
business
Surface states
Pyramid (geometry)
Subjects
Details
- ISSN :
- 13698001
- Volume :
- 63
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi...........9e68e448f99242e04e0e01670af3b7b7
- Full Text :
- https://doi.org/10.1016/j.mssp.2017.02.030