Bi-layered metal-oxide thin films processed at low-temperature for the encapsulation of highly stable organic photo-diode

A novel approach for the thin film encapsulation (TFE) of organic photo-diode (OPD) for the next generation of organic/inorganic hybrid complementary metal oxide semiconductor (CMOS) image sensor is reported. The TFE is composed of two different metal-oxides stacked in bi-layer thin film architecture. The first layer is composed of aluminum oxide (AlOx) deposited by atomic layer deposition (ALD) at a moderate temperature of 100 °C to avoid any damage to the organic active layer. The first layer acts as a water barrier layer and also as a first protective layer for the deposition of a second silicon oxynitride (SiON) layer that could be processed by plasma-enhanced chemical vapor deposition (PECVD) at higher temperatures. The second layer ensures a better mechanical and chemical stability of the whole structure and also serves as a second protective layer from damages induced during the additional processing stages, such as photolithography or microlensing. With the TFE architecture the overall device stability at 85 °C and 85% relative humidity exceeded 1000 h without observable device performance decrease. This was confirmed by fabricating a green-light sensitive OPD characterized by a stable external quantum efficiency of 60–70%.