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Ultra-low specific on-resistance vertical double-diffused metal—oxide semiconductor with a high-kdielectric-filled extended trench
- Source :
- Chinese Physics B. 22:027305
- Publication Year :
- 2013
- Publisher :
- IOP Publishing, 2013.
-
Abstract
- An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench (HK TG VDMOS) is proposed in this paper. The HK TG VDMOS features a high-k (HK) trench below the trench gate. Firstly, the extended HK trench not only causes an assistant depletion of the n-drift region, but also optimizes the electric field, which therefore reduces Ron,sp and increases the breakdown voltage (BV). Secondly, the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration. Thirdly, compared with the superjunction (SJ) vertical double-diffused metal-oxide semiconductor (VDMOS), the new device is simplified in fabrication by etching and filling the extended trench. The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩcm2 is obtained by simulation; its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%, in comparison with those of the conventional trench gate VDMOS (TG VDMOS) and conventional superjunction trench gate VDMOS(SJ TG CDMOS).
Details
- ISSN :
- 16741056
- Volume :
- 22
- Database :
- OpenAIRE
- Journal :
- Chinese Physics B
- Accession number :
- edsair.doi...........9e8af739de154592af90eb1389c58362