Cite
Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates
MLA
Chacko Jacob, et al. “Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates.” Materials Science Forum, Jan. 2001, pp. 127–30. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........9ef2f1f74d44ef230b6d4f069b58e70b&authtype=sso&custid=ns315887.
APA
Chacko Jacob, Shigehiro Nishino, & Pirouz Pirouz. (2001). Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates. Materials Science Forum, 127–130.
Chicago
Chacko Jacob, Shigehiro Nishino, and Pirouz Pirouz. 2001. “Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates.” Materials Science Forum, January, 127–30. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........9ef2f1f74d44ef230b6d4f069b58e70b&authtype=sso&custid=ns315887.