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Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy
- Source :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:02C115
- Publication Year :
- 2014
- Publisher :
- American Vacuum Society, 2014.
-
Abstract
- Laser diodes (LDs) were grown by plasma-assisted molecular beam epitaxy on semipolar (202¯1) GaN substrates. Metal-rich conditions provided smooth surface morphology and good structural quality as confirmed by atomic force microscopy and transmission electron microscopy studies. No stacking faults or any linear defects were formed during the growth in the InGaN/InGaN multiquantum well active region. Devices were processed with ridge-waveguide along the [1¯21¯0] direction. Mirrors were cleaved or fabricated by focused ion beam (FIB) processing. LDs operated at 388.2 nm with the threshold current density 13.2 kA/cm2 and the threshold voltage 10.8 V. The device with mirrors fabricated by FIB processing reached practically the same threshold current and slope efficiency as the one with cleaved mirrors. The authors present the beneficial role of the InGaN optical confinement layers in semipolar LDs, which can be optimized to improve the threshold current of these devices.
- Subjects :
- Materials science
business.industry
Process Chemistry and Technology
Slope efficiency
Plasma
Laser
Focused ion beam
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Threshold voltage
law.invention
Optics
Transmission electron microscopy
law
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Instrumentation
Diode
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 21662754 and 21662746
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
- Accession number :
- edsair.doi...........9f34d7e5e43a60faadfbb4024bd7903e
- Full Text :
- https://doi.org/10.1116/1.4865913