Back to Search
Start Over
Formation of waveguides by implantation of 3.0MeV Ni2+
- Source :
- Journal of Applied Physics. 96:3463-3466
- Publication Year :
- 2004
- Publisher :
- AIP Publishing, 2004.
-
Abstract
- 3.0MeV Ni2+ in the beam doses from 1×1013to9×1014ions∕cm2 are implanted into LiNbO3 single crystals at room temperature. After 300°C annealing for 30min in air ambient, dark mode measurement is done by the prism-coupling technique. Waveguides from both raised extraordinary index layer and barrier-confined are formed by low and high beam dose implantation, respectively. In the samples implanted by mediate beam doses, a phenomenon of “missing mode” is observed. The experimental results are analyzed and compared with the simulated results from a theoretical model, which is based on the assumption that the change of index induced by implantation is mainly governed by degradation of polarization and reduction of material density. With a fiber probe, the waveguide loss from single transverse magnetic mode is measured, which is about 3dB∕cm.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 96
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........9f51514d5da8ef1c2833b03977da6963