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Radical-Enhanced Atomic Layer Deposition of a Tungsten Oxide Film with the Tunable Oxygen Vacancy Concentration
- Source :
- The Journal of Physical Chemistry C. 124:18156-18164
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- This work reports a radical-enhanced atomic layer deposition (REALD) process using WH2(Cp)2–O*–H* reaction cycles (Cp = cyclopentadienyl group) to grow WO3–x films with a wide range of tunable oxyg...
- Subjects :
- Range (particle radiation)
Materials science
Analytical chemistry
Tungsten oxide
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Oxygen vacancy
0104 chemical sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Atomic layer deposition
General Energy
Cyclopentadienyl complex
Physical and Theoretical Chemistry
0210 nano-technology
Subjects
Details
- ISSN :
- 19327455 and 19327447
- Volume :
- 124
- Database :
- OpenAIRE
- Journal :
- The Journal of Physical Chemistry C
- Accession number :
- edsair.doi...........9fd5bde55460d05179e1294d01451102