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A method for SiC MOSFETs gate oxide degradation monitoring based on turn-on di/dt delay time

Authors :
Jianlong Kang
Qiang Wu
Yu Chen
He Xu
Haoze Luo
Zhen Xin
Source :
2022 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific).
Publication Year :
2022
Publisher :
IEEE, 2022.

Details

Database :
OpenAIRE
Journal :
2022 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific)
Accession number :
edsair.doi...........a1426e3e0c3178a884680db6478565a4

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