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GaN schottky barrier MOSFET using transparent source/drain electrodes for UV-optoelectronic integration
- Source :
- Solid-State Electronics. 73:78-80
- Publication Year :
- 2012
- Publisher :
- Elsevier BV, 2012.
-
Abstract
- We fabricated a normally-off mode n-channel schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET) with transparent electrodes (ITO, IZO) as source/drain (S/D) contact on a highly resistive GaN layer grown on silicon substrate. Fabricated SB-MOSFET with ITO S/D exhibited as high as 40 mA/mm of maximum drain current and a 12 mS/mm of maximum transconductance with the threshold voltage of 4.2 V, which is far better than that of SB-MOSFET with IZO S/D. The normalized off-current was as low as 10 nA/mm. The UV–visible extinction ratio of a MOSFET type UV-sensor was measured over 130 for VDS = 5 V. ITO was proved as a promising schottky barrier material for GaN MOSFET source and drain not only for the electronic but UV-sensing applications better than IZO for this purpose.
- Subjects :
- Resistive touchscreen
Materials science
Silicon
business.industry
Schottky barrier
Transconductance
chemistry.chemical_element
Substrate (electronics)
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Threshold voltage
chemistry
MOSFET
Materials Chemistry
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 00381101
- Volume :
- 73
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi...........a15831ee11ced2f650eb045f23b94cc4