Back to Search
Start Over
Design of a 1200-V Thin-Silicon-Layer p-Channel SOI LDMOS Device
- Source :
- Chinese Physics Letters. 28:128503
- Publication Year :
- 2011
- Publisher :
- IOP Publishing, 2011.
-
Abstract
- A 1200-V thin-silicon-layer p-channel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor is designed. The device named INI SOI p-LDMOS is characterized by a series of equidistant high concentration n+ islands inserted at the interface of a top silicon layer and a buried oxide layer. Accumulation-mode holes, caused by the electric potential dispersion between the device surface and the substrate, are located in the spacing between two neighboring n+ islands, and greatly enhance the electric field of the buried oxide layer and therefore, effectively increase the device breakdown voltage. Based on a 2-μm-thick buried oxide layer and a 1.5-μm-thick top silicon layer, a breakdown voltage of 1224 V is obtained, resulting in the high electric field (608 V/μm) of the buried oxide layer.
Details
- ISSN :
- 17413540 and 0256307X
- Volume :
- 28
- Database :
- OpenAIRE
- Journal :
- Chinese Physics Letters
- Accession number :
- edsair.doi...........a159cf2591a08af4d3fdaae32914df90