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A predictive contact reliability model for MEM logic switches

Authors :
Elad Alon
Tiehui Liu
Hei Kam
Source :
2010 International Electron Devices Meeting.
Publication Year :
2010
Publisher :
IEEE, 2010.

Abstract

Micro-electro-mechanical (MEM) switches are of interest for ultra-low-power electronics applications [1–5] because they offer the ideal characteristics of zero off-state leakage and abrupt switching behavior. The endurance of these devices can be limited by Joule heating at the contacting asperities (Figs. 1 and 2) which eventually leads to welding-induced failure. To provide guidance for reliable MEM switch design, a predictive contact reliability model is developed and validated in this work. The results show that device endurance depends not only on the contact material, but also on the operating voltage, series resistance, load capacitance, and logic style. Using the reliability model, endurance exceeding 1015 on/off cycles is projected for a scaled MEM switch technology operating at 1V.

Details

Database :
OpenAIRE
Journal :
2010 International Electron Devices Meeting
Accession number :
edsair.doi...........a2621d64b541b6d5400bfac9b6582aa9