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Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode

Authors :
Jiannong Wang
Kevinjing Chen
Maojun Wang
Baikui Li
Source :
Applied Physics Letters. 99:062101
Publication Year :
2011
Publisher :
AIP Publishing, 2011.

Abstract

The effect of fluorine-plasma (F-plasma) implantation on the current-voltage (I-V) and electroluminescence (EL) characteristics of Ni/Au-AlGaN/GaN Schottky diodes have been investigated. The observed EL spectrum is dominated by the GaN near band edge emissions. The threshold current of the EL emission for F-plasma implanted diodes is significantly lower than that for the previously reported diodes without the F-plasma implantation. This reduction of threshold current results from the presence of negatively charged F-centers in AlGaN layer which leads to upward band bending of AlGaN layer and enhanced hole injection by multi-step tunneling process through AlGaN layer. The magnitude of the upward banding in AlGaN layer is estimated to be 0.36 eV by analyzing the forward-biased I-V characteristics.

Details

ISSN :
10773118 and 00036951
Volume :
99
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........a3033a6f723b72907c104b51f53a5887