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Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode
- Source :
- Applied Physics Letters. 99:062101
- Publication Year :
- 2011
- Publisher :
- AIP Publishing, 2011.
-
Abstract
- The effect of fluorine-plasma (F-plasma) implantation on the current-voltage (I-V) and electroluminescence (EL) characteristics of Ni/Au-AlGaN/GaN Schottky diodes have been investigated. The observed EL spectrum is dominated by the GaN near band edge emissions. The threshold current of the EL emission for F-plasma implanted diodes is significantly lower than that for the previously reported diodes without the F-plasma implantation. This reduction of threshold current results from the presence of negatively charged F-centers in AlGaN layer which leads to upward band bending of AlGaN layer and enhanced hole injection by multi-step tunneling process through AlGaN layer. The magnitude of the upward banding in AlGaN layer is estimated to be 0.36 eV by analyzing the forward-biased I-V characteristics.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 99
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........a3033a6f723b72907c104b51f53a5887