Czochralski growth of SitGe1-x single crystals

Si x Ge 1- x single crystals with a Ge content up to 20 at% were grown by the Czochralski technique and the growth parameters were defined. The crystalline perfection was evaluated by high resolution X-ray diffractometry (HRXRD). The half widths of the rocking curves were found to be 16–21 arc sec, showing a crystal perfection that lies near commercially available silicon single crystals.