Improvement of crystal quality of GaN grown on AlN template by MOCVD using HT‐AlN interlayer [Phys. Status Solidi C 6 , No. S2, S317–S320 (2009)]

In the PDF file of the paper by Y. B. Tao et al. [Phys. Status Solidi C 6, S317 (2009)], published online 7 May 2009, a wrong image was loaded: in place of Fig. 2, inadvertently Fig. 1 was shown again. This Erratum displays Figs. 1 and 2 properly. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)