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Study on the nitridation of β-Ga2O3 films*

Authors :
Zhitai Jia
Peng Chen
Hong Zhao
Zili Xie
Xiangqian Xiu
Li Yuewen
Fei Cheng
Bin Liu
Duo Liu
Tao Tao
Rong Zhang
Hua Xuemei
Youdou Zheng
Source :
Chinese Physics B. 28:088103
Publication Year :
2019
Publisher :
IOP Publishing, 2019.

Abstract

Single-crystal GaN layers have been obtained by nitriding β-Ga2O3 films in NH3 atmosphere. The effect of the temperature and time on the nitridation and conversion of Ga2O3 films have been investigated. The nitridation process results in lots of holes in the surface of films. The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films. The converted GaN porous films show the single-crystal structures and low-stress, which can be used as templates for the epitaxial growth of high-quality GaN.

Details

ISSN :
16741056
Volume :
28
Database :
OpenAIRE
Journal :
Chinese Physics B
Accession number :
edsair.doi...........a3af212938a162b689e083e951f78119