Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor

MLA

Hsi-Jen Pan, et al. “Investigation of InGaP/GaAs Double-Delta-Doped Heterojunction Bipolar Transistor.” Semiconductor Science and Technology, vol. 13, June 1998, pp. 630–33. EBSCOhost, https://doi.org/10.1088/0268-1242/13/6/015.

APA

Hsi-Jen Pan, Yung-Hsin Shie, Shiou-Ying Cheng, Wei-Chou Wang, Wen-Chau Liu, & Wen-Lung Chang. (1998). Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor. Semiconductor Science and Technology, 13, 630–633. https://doi.org/10.1088/0268-1242/13/6/015

Chicago

Hsi-Jen Pan, Yung-Hsin Shie, Shiou-Ying Cheng, Wei-Chou Wang, Wen-Chau Liu, and Wen-Lung Chang. 1998. “Investigation of InGaP/GaAs Double-Delta-Doped Heterojunction Bipolar Transistor.” Semiconductor Science and Technology 13 (June): 630–33. doi:10.1088/0268-1242/13/6/015.