Back to Search
Start Over
Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface
- Source :
- Applied Surface Science. 435:163-169
- Publication Year :
- 2018
- Publisher :
- Elsevier BV, 2018.
-
Abstract
- High-quality AlN epitaxial films have been grown on Si substrates by optimizing the hydrofluoric acid (HF) solution for cleaning of Si substrates. Effect of the Si substrate surface on the surface morphology and structural property of AlN epitaxial films is investigated in detail. It is revealed that as the concentration of HF solution increases from 0 to 2.0%, the surface morphology and the crystalline quality are initially improved and then get worse, and show an optimized value at 1.5%. The as-grown ∼200 nm-thick AlN epitaxial films on Si substrates grown with HF solution of 1.5% reveal the root-mean-square (RMS) surface roughness of 0.49 nm and the full-width at half-maximum for AlN(0002) X-ray rocking curve of 0.35°, indicating the smooth surface morphology and the high crystalline quality. The corresponding mechanism is proposed to interpret the effect of Si substrate surface on surface morphology and structural property of AlN epitaxial films, and provides an effective approach for the perspective fabrication of AlN-based devices.
- Subjects :
- Surface (mathematics)
Morphology (linguistics)
Materials science
Fabrication
General Physics and Astronomy
02 engineering and technology
010402 general chemistry
Epitaxy
01 natural sciences
chemistry.chemical_compound
Quality (physics)
Hydrofluoric acid
Si substrate
Surface roughness
business.industry
Surfaces and Interfaces
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
0104 chemical sciences
Surfaces, Coatings and Films
Crystallography
chemistry
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 435
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........a3ef9b97d898444148ff7970bb02ec1c