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Hot carrier aging degradation phenomena in GaN based MESFETs
- Source :
- Microelectronics Reliability. 44:1375-1380
- Publication Year :
- 2004
- Publisher :
- Elsevier BV, 2004.
Details
- ISSN :
- 00262714
- Volume :
- 44
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........a40ed5fa6f7092232eb0164712ffc680