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Hot carrier aging degradation phenomena in GaN based MESFETs

Authors :
Didier Theron
Christophe GAQUIERE
Gaudenzio Meneghesso
Source :
Microelectronics Reliability. 44:1375-1380
Publication Year :
2004
Publisher :
Elsevier BV, 2004.

Subjects

Subjects :
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials

Details

ISSN :
00262714
Volume :
44
Database :
OpenAIRE
Journal :
Microelectronics Reliability
Accession number :
edsair.doi...........a40ed5fa6f7092232eb0164712ffc680

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