Back to Search Start Over

Fowler–Nordheim conduction in polysilicon (n+)-oxide–silicon (p) structures: Limit of the classical treatment in the barrier height determination

Authors :
C. Petit
G. Salace
A. Hadjadj
Source :
Journal of Applied Physics. 89:7994-8001
Publication Year :
2001
Publisher :
AIP Publishing, 2001.

Abstract

Fowler–Nordheim current in Si-poly (n+)-SiO2–Si(p) structures, with an oxide thickness varying between 3 and 12 nm, has been measured and numerically computed with the exact electric field in the oxide, the field dependence of the barrier shape with the image force, and the temperature effects. The fit of the experimental data leads to an accurate determination of the electron affinity difference and the barrier height at the emitting Si–poly (n+)-gate-electrode–oxide interface. The evolution of these two parameters with temperature is discussed in relation with the oxide thickness.

Details

ISSN :
10897550 and 00218979
Volume :
89
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........a54eb8c1ba3d53dffc25c53093ac4aa5
Full Text :
https://doi.org/10.1063/1.1374479