MWIR InAs1-xSbx nCBn detectors data and analysis

In InAs1-xSbx material alloy composition was adjusted to achieve 200K cutoff wavelengths in the 5 mm range. Reflectance was minimized and absorption in the InAs1-xSbx material maximized by the use of pyramid shaped structures fabricated in the InAs1-xSbx material which function as an AR coating. Compound-barrier (CB) detectors were fabricated and tested for optical response and dark current density versus bias measurements were acquired as a function of temperature. For 5 mm cutoff detectors, QE is high, ~ 75 % between 4.0 mm and 4.6 mm and g 80 % between 2.0 mand 4.0 mm, demonstrating the efficacy of the pyramids as photon trap structures and as a replacement for multi-layer AR-coatings. Jdark in the low 10-3 A/cm2 range at 200 K and low 10-5 A/cm2 range at 150 K was measured at the bias at which the QE peaked.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.