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Scanning Kerr Microscopy of the Spin Hall Effect in n-Doped GaAs with Various Doping Concentration

Authors :
Yuzo Ohno
Hideo Ohno
S. Matsuzaka
Source :
Journal of Superconductivity and Novel Magnetism. 23:37-39
Publication Year :
2009
Publisher :
Springer Science and Business Media LLC, 2009.

Abstract

We investigated the doping concentration (ND) dependence of the extrinsic spin Hall effect (SHE) in n-doped GaAs with ND raging from 3×1016 cm−3 to 5×1017 cm−3. By using scanning Kerr microscopy (SKM) measurements, we observed the Kerr rotation signal due to the spin accumulation near the channel edges in all the samples with different ND. Moreover, the position and in-plane magnetic field dependence of the Kerr rotation signal are found to vary with ND. We analyzed the ND dependence of the spin Hall conductivity by taking account of the ND-dependent spin lifetime based on the typical drift-diffusion model.

Details

ISSN :
15571947 and 15571939
Volume :
23
Database :
OpenAIRE
Journal :
Journal of Superconductivity and Novel Magnetism
Accession number :
edsair.doi...........a581d073474d7af2eef474c3feb89baf
Full Text :
https://doi.org/10.1007/s10948-009-0558-6