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Scanning Kerr Microscopy of the Spin Hall Effect in n-Doped GaAs with Various Doping Concentration
- Source :
- Journal of Superconductivity and Novel Magnetism. 23:37-39
- Publication Year :
- 2009
- Publisher :
- Springer Science and Business Media LLC, 2009.
-
Abstract
- We investigated the doping concentration (ND) dependence of the extrinsic spin Hall effect (SHE) in n-doped GaAs with ND raging from 3×1016 cm−3 to 5×1017 cm−3. By using scanning Kerr microscopy (SKM) measurements, we observed the Kerr rotation signal due to the spin accumulation near the channel edges in all the samples with different ND. Moreover, the position and in-plane magnetic field dependence of the Kerr rotation signal are found to vary with ND. We analyzed the ND dependence of the spin Hall conductivity by taking account of the ND-dependent spin lifetime based on the typical drift-diffusion model.
Details
- ISSN :
- 15571947 and 15571939
- Volume :
- 23
- Database :
- OpenAIRE
- Journal :
- Journal of Superconductivity and Novel Magnetism
- Accession number :
- edsair.doi...........a581d073474d7af2eef474c3feb89baf
- Full Text :
- https://doi.org/10.1007/s10948-009-0558-6