Back to Search Start Over

Preventing trench defect formation in InGaN epilayers using Ga-migration-enhanced epitaxy

Authors :
Hao Jiang
Bin Li
Zhisheng Wu
Hailong Wang
Zesheng Lv
Supeng Zhang
Source :
Applied Physics Express. 12:105502
Publication Year :
2019
Publisher :
IOP Publishing, 2019.

Subjects

Subjects :
Materials science
business.industry
Trench
General Engineering
General Physics and Astronomy
Optoelectronics
business
Epitaxy

Details

ISSN :
18820786 and 18820778
Volume :
12
Database :
OpenAIRE
Journal :
Applied Physics Express
Accession number :
edsair.doi...........a5d52f02a592905b0fd4aa4c733e2225
Full Text :
https://doi.org/10.7567/1882-0786/ab42c2
Full Text Access
View/download PDF

Tools

Authors Abstract Subjects Details