Impurity level properties in transition metal doped α-Ga2O3 for optoelectronic applications

Authors :: Zhenhua Lin
Yue Hao
Jie Su
Jingjing Chang
Haidong Yuan
Yifei Wang
Jincheng Zhang
Source :: Semiconductor Science and Technology.
Publication Year :: 2021
Publisher :: IOP Publishing, 2021.

Subjects :: Materials science
Transition metal
Impurity
business.industry
Doping
Materials Chemistry
Optoelectronics
Density functional theory
Electrical and Electronic Engineering
Condensed Matter Physics
business
Electronic, Optical and Magnetic Materials

Tools