Suppression of Stress-Induced Defects in FinFET by Implantation and STI Co-Optimization

MLA

David Wei Zhang, et al. “Suppression of Stress-Induced Defects in FinFET by Implantation and STI Co-Optimization.” IEEE Transactions on Electron Devices, vol. 68, May 2021, pp. 2587–89. EBSCOhost, https://doi.org/10.1109/ted.2021.3068241.

APA

David Wei Zhang, Qing-Qing Sun, Hao Zhu, Ji Li, Lin Chen, & Bin Ye. (2021). Suppression of Stress-Induced Defects in FinFET by Implantation and STI Co-Optimization. IEEE Transactions on Electron Devices, 68, 2587–2589. https://doi.org/10.1109/ted.2021.3068241

Chicago

David Wei Zhang, Qing-Qing Sun, Hao Zhu, Ji Li, Lin Chen, and Bin Ye. 2021. “Suppression of Stress-Induced Defects in FinFET by Implantation and STI Co-Optimization.” IEEE Transactions on Electron Devices 68 (May): 2587–89. doi:10.1109/ted.2021.3068241.