The preparation of PbTiO3 thin films by sol-gel processing

PbTiO 3 polycrystalline thin films with perovskite structure have been prepared on an Si single-crystal substrate by sol-gel processing. Highly oriented perovskite PbTiO 3 thin films have also been prepared on MgO and SrTiO 3 single-crystal substrates. The PbTiO 3 thin films have good ferroelectricity and pyroelectricity. The values of spontaneous polarization P s , remanent polarization P r and coercive field E c of the PbTiO 3 polycrystalline thin films are 30 μC/cm 2 , 15 μC/cm 2 and 50 kV/cm, respectively. The polycrystalline thin films have a high pyroelectric coefficient γ of 2.9 × 10 −8 C/cm 2 K, high figure of merit for voltage responsivity F v (=γ/ C v e r ) of 60 × 10 −12 C cm/J and a figure of merit for specific detectivity F m (=γ/ C v (e r tg δ) 1/2 ) of 0.74 × 10 −8 C cm/J.