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Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes
- Source :
- Carbon. 57:477-484
- Publication Year :
- 2013
- Publisher :
- Elsevier BV, 2013.
-
Abstract
- Epitaxial graphene growth was performed on the Si-terminated face of 4H-, 6H-, and 3C-SiC substrates by silicon sublimation from SiC in argon atmosphere at a temperature of 2000 degrees C. Graphene ...
Details
- ISSN :
- 00086223
- Volume :
- 57
- Database :
- OpenAIRE
- Journal :
- Carbon
- Accession number :
- edsair.doi...........a6c50faee44a561014c04ed403726170
- Full Text :
- https://doi.org/10.1016/j.carbon.2013.02.022