Ultraviolet-light-driven current modulation of Au/WS2/Gr Schottky barrier

Two dimensional (2D) layered materials such as graphene and transition metal dichalcogenides (TMDCs) have gain profound attention owing to their unique electrical, optical, structural and mechanical properties . These novel features make them promising candidate for the next generation optoelectronic and photonic devices . Here, we demonstrated the gate-voltage dependent current modulation of vertical Au/WS 2 /Gr Schottky barrier . A clear rectification is observed in J-V characteristic curves at different gate-voltage due to asymmetric barriers Au/WS 2 and WS2/Gr. The current modulation is obtained by varying the gate-voltage and the extracted rectification ratios ranging from 2.25 × 103 at −60 V to 1.65 × 103 at +60 V, respectively. Furthermore, the junction is utilized for the photo response at several drain to source and gate voltages which reveals modulation in the photocurrent . The photocurrent detected at V ds 0.5 V is ~24 μA that is enhanced to ~52 μA upon varying the Vds to 1 V. Gate tunable photoresponse of the junction depicts that the photocurrent is enhanced from 16 μA at Vg 20 V to ~17 μA at Vg 60 V. Our results demonstrate an effective way to modulate the current of Schottky junction (Au/WS2 /Gr) by employing gate voltage whereas the tunability in the photocurrent unveil its potential applications in next generation photodetectors .