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First-principles calculations of aluminium nitride monolayer with chemical functionalization
- Source :
- Applied Surface Science. 481:1549-1553
- Publication Year :
- 2019
- Publisher :
- Elsevier BV, 2019.
-
Abstract
- Using density functional theory computations, the structures and electronic properties of hydrogenated and fluorinated aluminium nitride (AlN) were systematically investigated. We found that fully hydrogenated AlN (H–AlN–H) is an indirect-bandgap semiconductor which is similar to an AlN monolayer. Interestingly, Janus functionalized AlN (F–AlN–H) is a direct-bandgap semiconductor with a bandgap of 3.076 eV. F–AlN–H bilayer is also a direct-bandgap semiconductor, but its bandgap (only 0.187 eV) is much smaller than that of F–AlN–H monolayer. In addition, the gap values of both the F–AlN–H monolayer and the F–AlN–H bilayer can be continuously modulated by a perpendicular electric field; semiconductor–metal transition can even be obtained by applying a small electric field in the F–AlN–H bilayer. Our results are expected to shed light on the fabrication of electronic and optoelectronic devices based on AlN monolayer.
- Subjects :
- Materials science
Fabrication
business.industry
Band gap
Aluminium nitride
Bilayer
General Physics and Astronomy
02 engineering and technology
Surfaces and Interfaces
General Chemistry
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
0104 chemical sciences
Surfaces, Coatings and Films
chemistry.chemical_compound
Semiconductor
chemistry
Electric field
Monolayer
Optoelectronics
Density functional theory
0210 nano-technology
business
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 481
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........a76ff9eaab17d1212847804b50ce4dd7