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A Deep Insight Into the Impact of Bipolar Degradations on Avalanche Robustness of 4H-SiC MOSFETs
- Source :
- IEEE Transactions on Electron Devices. :1-9
- Publication Year :
- 2023
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2023.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........a7ae6a599cbfe12acb0eb45169460cd7
- Full Text :
- https://doi.org/10.1109/ted.2023.3274617