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Formation of SiC Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemical Vapor Deposition
- Source :
- Plasma Science and Technology. 12:547-550
- Publication Year :
- 2010
- Publisher :
- IOP Publishing, 2010.
-
Abstract
- Growth of SiC nanowires in plasma-assisted hot filament chemical-vapor-deposition by using hexamethyldisiloxane (HMDSO) as the gas source is reported. The SiC nanowires (SiC-NWs) grew on Au-coated silicon substrate with core-shell structure, where the core consisted of polycrystalline SiC grains and the shell exhibited amorphous structure. The featured structures such as cones, polyhedrons, ball-liked particles were observed in the case without plasma assistance. The underlying mechanism for the growth of nanostructures was also discussed. The high chemical activity induced by the plasma process plays an important role in using monomer to generate nanostructure.
- Subjects :
- Hexamethyldisiloxane
Nanostructure
Materials science
Silicon
Nanowire
chemistry.chemical_element
Nanotechnology
Substrate (electronics)
Chemical vapor deposition
Condensed Matter Physics
Amorphous solid
chemistry.chemical_compound
stomatognathic system
Chemical engineering
chemistry
Crystallite
Subjects
Details
- ISSN :
- 10090630
- Volume :
- 12
- Database :
- OpenAIRE
- Journal :
- Plasma Science and Technology
- Accession number :
- edsair.doi...........a87fa4efd0cc4e662f588451fee31bef