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A Low Specific on-Resistance SOI Trench MOSFET with a Non-Depleted Embedded p-Island
- Source :
- Chinese Physics Letters. 30:078501
- Publication Year :
- 2013
- Publisher :
- IOP Publishing, 2013.
-
Abstract
- A novel silicon-on-insulator (SOI) trench metal-oxide-semiconductor field effect transistor (MOSFET) with a reduced specific on-resistance (Ron,sp) is presented. It features an oxide-filled trench and a non-depleted embedded p-type island (p-SOI). The oxide trench folds the drift region into a U-shape, resulting in a reduction in cell pitch and Ron,sp. The non-depleted p-island is employed to further reduce Ron,sp by increasing the optimized doping concentration of the drift region without deteriorating the breakdown voltage (BV). The simulation results show that the p-SOI decreases the Ron,sp to 10.2mΩcm2 from 17.4mΩcm2 of the conventional SOI MOSFET at the same BV.
Details
- ISSN :
- 17413540 and 0256307X
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- Chinese Physics Letters
- Accession number :
- edsair.doi...........a8e17f89200d0f1cce7728516561b42b