MBE growth of dilute magnetic (Zn,Mn)Se on Si substrates

We have demonstrated growth of the dilute magnetic II–VI semiconductor (Zn,Mn)Se on As-passivated (100) oriented Si substrates. Low temperature epitaxy has been used to optimize the growth start. The morphology has been assessed by Nomarski and scanning electron microscopy (SEM). SQUID measurements show the full magnetic moment of the Mn ions and optical investigations show a clear Zeeman splitting of up to 30 meV. All observations indicate a high crystalline quality of the epitaxial layers. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)