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Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process
- Source :
- Chinese Physics Letters. 30:087303
- Publication Year :
- 2013
- Publisher :
- IOP Publishing, 2013.
-
Abstract
- We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors (PMOSFETs) with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process. In the process, SiO2/poly-Si is adopted as the dummy gate stack and replaced by an HfSiAlON/MoAlN gate stack after source/drain formation. Because of the high-k/metal-gate stack formation after the 1000°C source/drain ion-implant doping activation, the fabricated PMOSFET has good electrical characteristics. The device's saturation driving current is 2.71 × 10−4 A/μm (VGS = VDS = −1.5 V) and the off-state current is 2.78 × 10−9 A/μm. The subthreshold slope of 105 mV/dec (VDS = −1.5 V), drain induced barrier lowering of 80 mV/V and Vth of −0.3 V are obtained. The research indicates that the present PMOSFET could be a solution for high performance PMOSFET applications.
Details
- ISSN :
- 17413540 and 0256307X
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- Chinese Physics Letters
- Accession number :
- edsair.doi...........a93b6114583985ccfc6bf1709c08f285