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Metal-insulator Transition of 2D Electrons in a Modulation Doped Si/Si1−xGex Heterostructure
- Source :
- AIP Conference Proceedings.
- Publication Year :
- 2006
- Publisher :
- AIP, 2006.
-
Abstract
- We report the observation of the apparent metal‐insulator transition (MIT) of two‐dimensional electrons in a high quality modulation doped Si/Si1−xGex heterostructure. The critical density nc, at which the thermal coefficient of its low temperature resistivity changes sign, is 0.32×1011 cm−2, much smaller than the nc of ∼ 0.8×1011cm−2 seen in clean Si‐MOSFET’s. This is consistent with previous observations in 2D holes in GaAs that nc decreases with decreasing disorder.
Details
- ISSN :
- 0094243X
- Database :
- OpenAIRE
- Journal :
- AIP Conference Proceedings
- Accession number :
- edsair.doi...........aa08bfabe6982661528162b7669aa702