Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

Authors :: Tolen Nelson
Daniel G. Georgiev
Michael R. Hontz
Raghav Khanna
Adrian Ildefonso
Andrew D. Koehler
Karl Hobart
Ani Khachatrian
Dale McMorrow
Source :: IEEE Transactions on Nuclear Science. 70:328-335
Publication Year :: 2023
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 2023.

Subjects :: Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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