Effect of Ga Substitution at Mn Site on Electroresistance Behavior in Monovalent Doped La0.85Ag0.15Mn1-xGaxO3 Manganites

The effects of Ga substitution at Mn site on electroresistance behaviour of La0.85Ag0.15MnO3 compound prepared by solid-state reaction method were investigated. X-ray diffraction (XRD) measurement were recorded at room temperature and refined by employing Rietveld techniques. Ferromagnetic to paramagnetic transitions behaviour have been observed from ac susceptibility results. Resistivity-temperature curve with different applied currents of 1 mA and 5 mA showed metal-insulator, MI transition temperature, TMI decreased with increased of the applied currents. The increased in applied current caused the maximum resistivity around TMI to be decreased for both samples indicated increased in charge carrier density which resulting in drop of resistivity, hence, enhanced double exchange mechanism. The electroresistance (ER) effects have been investigated. The result showed that the ER effect increases when Ga is substituted.